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SEMIKRON
  • SKiM￠c
    •  l IGBT Six Pack Modules
    SKiiP￠c2,3 600v |  1200v |  1700v
    SKiM￠c IGBT Six Pack Modules
    SEMITRANS 600v |  1200v |  1700v
    MiniSKiiP CIB Modules
    SEMITOP IGBT/MOS/Thyristor/Diode Modules for wave soldering
    Type VCES IC@ THS VCEsat
    @?5 °C typ.     		E
    @125 °C typ.     		Rthjs
    max.     		Case
    V A deg;C V mJ K/W
    ?600 V Superfast NPT-IGBT
    SKiM 300GD 063D 600 236 5 1,6 19 0,2 4
    SKiM 350GD 063DM 600 300 5 1,6 19 0,135 4
    SKiM 400GD 063 D 600 420 5 1,5 28 0,13 5
    SKiM 500GD 063 DM * 600 525 5 1,5 28 0,09 5
    1200 V Trench - IGBT
    SKiM 150GD 126D?SUP>* 1200 130 5 1,7 25 0,32 4
    SKiM 300GD 126D 1200 260 5 1,7 49 0,2 4
    SKiM 400GD 126DM 1200 330 5 1,7 49 0,135 4
    SKiM 450GD 126D 1200 425 5 1,7 74 0,13 5
    SKiM 601GD 126DM 1200 480 5 1,7 74 0,09 5
    ?1200 V SPT - IGBT
    SKiM 200GD 128D 1200 186 5 2,0 29 0,24 4
    SKiM 250GD 128D 1200 235 5 2,0 41 0,20 4
    SKiM 350GD 128DM 1200 300 5 2,0 41 0,135 4
    SKiM 400GD 128D 1200 350 5 2,0 62 0,13 5
    SKiM 500GD 128DM 1200 450 5 2,0 62 0,09 5
    ?1700 V Trench - IGBT
    SKiM 180GD 176D* 1700 180 5 2,0 200 0,25 4
    SKiM 270GD 176D * 1700 270 5 2,0 300 0,175 5
    SKiM 380GD 176DM* 1700 425 5 2,0 375 0,09 5
     
    * new
  • All data apply to one single IGBT switch
  • Data on request
  • Measured at chip level
    • Equation for temperature dependence:
    R( T ) = R ref [ 1 + A * ( T-T ref ) + B* ( T-T ref ) 2 ]
    R ref = 1 000 Ohm, T ref = 25 °C, A = 7,64 * 10 -3 °C -1 , B = 1,73 * 10 -5 °C -2


    Circuits
    SKiM 4 SKiM 5